Cobalt-titanium multilayer thin films: Effect of thickness of titanium spacer layer on impedance properties


Senturk E., Erkovan M., OKUTAN M., Kosemen A., Ozturk S. , Sahin Y.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.30, ss.482-485, 2015 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 30
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1016/j.mssp.2014.10.053
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Sayfa Sayıları: ss.482-485

Özet

We investigated the impedance parameters of cobalt titanium (Co-Ti) multilayer thin films deposited on native oxidized Si (100) substrate under ultra-high vacuum (4 x 10(-8) mbar) by magnetron sputtering at room temperature. Electrical properties of Co/Ti/Co multilayer films were analyzed depending on the thickness of Ti spacer layer with the impedance spectroscopy as a function of frequency. Co/Ti multilayer films exhibited dielectric relaxation in both real and imaginary part of dielectric constants at the kilohertz frequency region and piezoelectric properties at the megahertz frequency region. We determined that the fabricated multilayer films have complex and super imposed type behavior when DC conductivity is used at lower frequency, resonance event and relaxation properties. (C) 2014 Elsevier Ltd. All rights reserved.