Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride


Peng H. K. , Cil K. , Gokirmak A., Bakan G., ZHU Y., LAI C. S. , et al.

THIN SOLID FILMS, cilt.520, ss.2976-2978, 2012 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 520 Konu: 7
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.tsf.2011.11.033
  • Dergi Adı: THIN SOLID FILMS
  • Sayfa Sayısı: ss.2976-2978

Özet

The crystallization temperature of GeSbTe thin films with thicknesses between 11 and 87 nm on silicon nitride was studied through resistance versus temperature measurements. The amorphous-cubic phase transition occurs at similar to 150 degrees C for all films thicknesses, whereas the cubic-hexagonal phase transition temperature increases with film thickness, from similar to 200 degrees C for the 20 nm film to similar to 250 degrees C for the 87 nm film. The cubic-hexagonal transition occurs gradually for the 11 nm film. Implications for phase-change memory devices are discussed. (C) 2011 Elsevier B.V. All rights reserved.