A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors


KUNTMAN A. , ARDALI A., KUNTMAN H., Kacar F.

SOLID-STATE ELECTRONICS, cilt.48, ss.217-223, 2004 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 48 Konu: 2
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1016/j.sse.2003.07.001
  • Dergi Adı: SOLID-STATE ELECTRONICS
  • Sayfa Sayısı: ss.217-223

Özet

The importance of long term reliability in MOS VLSI circuits is becoming an important subject because of the increasing densities of VLSI chips. Hot carrier effects cause noncatastrophic failures which develop gradually over time and change the circuit performance.