Akademik Veri Yönetim Sistemi
Symposium on Semiconductor Materials for Sensing held at the 2004 MRS Fall Meeting, Massachusetts, Amerika Birleşik Devletleri, 29 Kasım - 02 Aralık 2004, cilt.828, ss.229-234
Formation processes of porous silicon on insulating substrate were studied. It was demonstrated that both electrochemical and chemical fort-nation methods allow to transform heavily doped p-type polycrystalline silicon into homogeneous porous silicon. Porous silicon was successfully used as sacrificial layer in the fabrication process of microbridge structures.