Formation of porous silicon layers on insulating substrate for microbridge - Type sensor applications


ANDRUSHIN S., BALAGUROV L., BAYLISS S., LIBEROVA G., PETROVA E., Unal B. , ...Daha Fazla

Symposium on Semiconductor Materials for Sensing held at the 2004 MRS Fall Meeting, Massachusetts, Amerika Birleşik Devletleri, 29 Kasım - 02 Aralık 2004, cilt.828, ss.229-234 identifier identifier

  • Cilt numarası: 828
  • Basıldığı Şehir: Massachusetts
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.229-234

Özet

Formation processes of porous silicon on insulating substrate were studied. It was demonstrated that both electrochemical and chemical fort-nation methods allow to transform heavily doped p-type polycrystalline silicon into homogeneous porous silicon. Porous silicon was successfully used as sacrificial layer in the fabrication process of microbridge structures.