JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, cilt.14, ss.1326-1330, 2019 (SCI İndekslerine Giren Dergi)
In this paper, a low-voltage and low-power dynamic threshold voltage Metal Oxide Semiconductor Field Effect Transistor (DTMOS) based current mode full-wave rectifier is presented. This presented rectifier contains only MOS transistors and avoids the use of a diode. Therefore, it is suitable for integrated circuit realization and occupies a low chip area. Furthermore, the power supply voltages are +/- 0.25 V and power consumption of full-wave rectifier is 83 nW and hence the presented full-wave rectifier based on DTMOS can be characterized by a low voltage and low power. In addition, the presented full-wave rectifier has high output impedances. DC analysis, temperature analysis, frequency dependent transfer (p(DC)) and RMS error (p(RMS)) analysis are given in order to indicate the performance of the circuit. The rectifier circuit is capable of operating at frequencies up to 1 MHz. The simulation results are given by using SPICE programming..