Quenching influence of cell culture medium on photoluminescence and morphological structure of porous silicon


Unal B.

APPLIED SURFACE SCIENCE, cilt.258, ss.207-211, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 258 Konu: 1
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.apsusc.2011.08.032
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Sayfa Sayıları: ss.207-211

Özet

In this work, the degradation of visible photoluminescence of porous silicon (PSi) under the influential actions of cell culture medium has been mainly studied in order to comprehend the quenching mechanisms necessitating the cell growth on spongy-like-silicon structures, which could form either micro- and/or nano-dimensional morphologies after stain-etching of the poly-or single-crystalline Si surfaces. Quenching effect of the neuron culture medium on visibly luminescent and non-luminescent porous silicon is found to be quite obvious so that this step of the culture process, especially, over nanostructured silicon is extremely essential for a variety of bionanotechnological applications. (C) 2011 Elsevier B.V. All rights reserved.