Preparation and characterization of SiO2-MxOy(M = V, Sn, Sb) thin films from silicic acid and metal chlorides

Kaşgöz A. , Abe Y.

Journal of Sol-Gel Science and Technology, vol.18, no.2, pp.127-136, 2000 (Journal Indexed in SCI Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 18 Issue: 2
  • Publication Date: 2000
  • Doi Number: 10.1023/a:1008712903021
  • Title of Journal : Journal of Sol-Gel Science and Technology
  • Page Numbers: pp.127-136


The preparation of SiO2-MxOy (M = V, Sn, Sb) binary oxide thin films by sol-gel method was investigated. The reaction of silicic acid with metal chloride (M = Sn and Sb) or oxychloride (M = V) formed homogeneous solutions. The dip-coating of slide glass and silicon wafer followed by heat treatment gave oxide films having Si-O-M bond. The changes of FT-IR spectra as a function of heat treatment temperature and molar composition confirmed the Si-O-M bonds. The sheet resistance of films increased with an increase on heat treatment temperature and decrease in the content of metal oxide MxOy. X-ray diffraction peaks were observed for the SiO2-V2O5 films with high V2O5 contents and heat-treated above 250 °C, while the others were amorphous. Oxide films heat treated at 500 °C had a thickness between 340-470 nm.