Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride


Creative Commons License

Cil K. , ZHU Y., LI J., LAM C. H. , Silva H.

THIN SOLID FILMS, cilt.536, ss.216-219, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 536
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.tsf.2013.03.087
  • Dergi Adı: THIN SOLID FILMS
  • Sayfa Sayıları: ss.216-219

Özet

The amorphous to face-centered cubic (fcc) and fcc to hexagonal close-packed (hcp) crystallization temperatures of GeSbTe thin films on underlying silicon nitride and silicon dioxide films were studied through slow(1 K/min) resistance versus temperature measurements. The amorphous to fcc phase transition is observed at similar to 170 degrees C for both cases but the fcc to hcp phase transition temperature for GeSbTe films on silicon nitride is observed to be similar to 80 degrees C lower than for GeSbTe films on silicon dioxide, possibly due to the hexagonal symmetry of silicon nitride. (C) 2013 Elsevier B.V. All rights reserved.